Temperature induced giant shift of phonon energy in epitaxial boron nitride layers

The recent progress in the growth of large-area boron nitride epilayers opens up new possibilities for future applications. However, it remains largely unclear how weakly attached two-dimensional BN layers interact with their substrate and how their properties are influenced by defects. In this work...

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Bibliographic Details

Published in:	Nanotechnology Vol. 34; no. 1
Main Authors:	Iwański, J, Tatarczak, P, Tokarczyk, M, Da̧browska, A K, Pawłowski, J, Binder, J, Kowalski, G, Stȩpniewski, R, Wysmołek, A
Format:	Journal Article
Language:	English
Published:	IOP Publishing 01.01.2023
Subjects:	defect charged states epitaxial boron nitride FTIR hBN MOVPE phonon
ISSN:	0957-4484, 1361-6528, 1361-6528
Online Access:	Get full text
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