Near interface ionic transport in oxygen vacancy stabilized cubic zirconium oxide thin films

The cubic phase of pure zirconia (ZrO ) is stabilized in dense thin films through a controlled introduction of oxygen vacancies (O defects) by cold-plasma-based sputtering deposition. Here, we show that the cubic crystals present at the film/substrate interface near-region exhibit fast ionic transpo...

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Vydáno v:Physical chemistry chemical physics : PCCP Ročník 20; číslo 41; s. 26068
Hlavní autoři: Raza, Mohsin, Sanna, Simone, Dos Santos Gómez, Lucia, Gautron, Eric, El Mel, Abdel Aziz, Pryds, Nini, Snyders, Rony, Konstantinidis, Stéphanos, Esposito, Vincenzo
Médium: Journal Article
Jazyk:angličtina
Vydáno: England 07.11.2018
ISSN:1463-9084, 1463-9084
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Popis
Shrnutí:The cubic phase of pure zirconia (ZrO ) is stabilized in dense thin films through a controlled introduction of oxygen vacancies (O defects) by cold-plasma-based sputtering deposition. Here, we show that the cubic crystals present at the film/substrate interface near-region exhibit fast ionic transport, which is superior to what is obtained with similar yttrium-stabilized cubic zirconia thin films.
Bibliografie:ObjectType-Article-1
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ISSN:1463-9084
1463-9084
DOI:10.1039/c8cp05465g