Near interface ionic transport in oxygen vacancy stabilized cubic zirconium oxide thin films

The cubic phase of pure zirconia (ZrO ) is stabilized in dense thin films through a controlled introduction of oxygen vacancies (O defects) by cold-plasma-based sputtering deposition. Here, we show that the cubic crystals present at the film/substrate interface near-region exhibit fast ionic transpo...

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Bibliographic Details
Published in:	Physical chemistry chemical physics : PCCP Vol. 20; no. 41; p. 26068
Main Authors:	Raza, Mohsin, Sanna, Simone, Dos Santos Gómez, Lucia, Gautron, Eric, El Mel, Abdel Aziz, Pryds, Nini, Snyders, Rony, Konstantinidis, Stéphanos, Esposito, Vincenzo
Format:	Journal Article
Language:	English
Published:	England 07.11.2018
ISSN:	1463-9084, 1463-9084
Online Access:	Get more information
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Summary:	The cubic phase of pure zirconia (ZrO ) is stabilized in dense thin films through a controlled introduction of oxygen vacancies (O defects) by cold-plasma-based sputtering deposition. Here, we show that the cubic crystals present at the film/substrate interface near-region exhibit fast ionic transport, which is superior to what is obtained with similar yttrium-stabilized cubic zirconia thin films.
Bibliography:	ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23
ISSN:	1463-9084 1463-9084
DOI:	10.1039/c8cp05465g