Electrical properties of strained off-stoichiometric Cu–Cr–O delafossite thin films

Off-stoichiometric Cu-Cr-O delafossite thin films with different thicknesses were grown by metal organic chemical vapor deposition on substrates with different coefficients of thermal expansion. Seebeck thermoelectric coefficient and resistivity measurements were performed on the range of 300-850 K....

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Veröffentlicht in:Journal of physics. Condensed matter Jg. 36; H. 21
Hauptverfasser: Moreira, Marco, Crêpellière, Jonathan, Polesel-Maris, Jérôme, Leturcq, Renaud, Guillot, Jérôme, Fleming, Yves, Lunca-Popa, Petru
Format: Journal Article
Sprache:Englisch
Veröffentlicht: England IOP Publishing 29.05.2024
Schlagworte:
copper chromium oxide delafossite
electronic properties
strain
strain
electronic properties
off-stoichiometric copper chromium oxide
ISSN:0953-8984, 1361-648X, 1361-648X
Online-Zugang:Volltext
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Zusammenfassung:Off-stoichiometric Cu-Cr-O delafossite thin films with different thicknesses were grown by metal organic chemical vapor deposition on substrates with different coefficients of thermal expansion. Seebeck thermoelectric coefficient and resistivity measurements were performed on the range of 300-850 K. A qualitative change in the temperature-dependence of the resistivity is observed at the temperature corresponding to the deposition process, where the transition from tensile to compressive strain takes place. Arrhenius plots reveal different slopes in these two thermal ranges. The fact that the shift is more pronounced for the thinner films might indicate the induced strain plays a role in changing electrical behaviour. Furthermore, changes below 0.1% in electrical mobility were measured when the strain is induced by mechanical bending.
Bibliographie:JPCM-122800.R1
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:0953-8984
1361-648X
1361-648X
DOI:10.1088/1361-648X/ad2a07