Exceptional plasticity in the bulk single-crystalline van der Waals semiconductor InSe

Inorganic semiconductors are vital for a number of critical applications but are almost universally brittle. Here, we report the superplastic deformability of indium selenide (InSe). Bulk single-crystalline InSe can be compressed by orders of magnitude and morphed into a Möbius strip or a simple ori...

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Veröffentlicht in:	Science (American Association for the Advancement of Science) Jg. 369; H. 6503; S. 542
Hauptverfasser:	Wei, Tian-Ran, Jin, Min, Wang, Yuecun, Chen, Hongyi, Gao, Zhiqiang, Zhao, Kunpeng, Qiu, Pengfei, Shan, Zhiwei, Jiang, Jun, Li, Rongbin, Chen, Lidong, He, Jian, Shi, Xun
Format:	Journal Article
Sprache:	Englisch
Veröffentlicht:	31.07.2020
ISSN:	1095-9203, 1095-9203
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Zusammenfassung:	Inorganic semiconductors are vital for a number of critical applications but are almost universally brittle. Here, we report the superplastic deformability of indium selenide (InSe). Bulk single-crystalline InSe can be compressed by orders of magnitude and morphed into a Möbius strip or a simple origami at room temperature. The exceptional plasticity of this two-dimensional van der Waals inorganic semiconductor is attributed to the interlayer gliding and cross-layer dislocation slip that are mediated by the long-range In-Se Coulomb interaction across the van der Waals gap and soft intralayer In-Se bonding. We propose a combinatory deformability indicator (Ξ) to prescreen candidate bulk semiconductors for use in next-generation deformable or flexible electronics.Inorganic semiconductors are vital for a number of critical applications but are almost universally brittle. Here, we report the superplastic deformability of indium selenide (InSe). Bulk single-crystalline InSe can be compressed by orders of magnitude and morphed into a Möbius strip or a simple origami at room temperature. The exceptional plasticity of this two-dimensional van der Waals inorganic semiconductor is attributed to the interlayer gliding and cross-layer dislocation slip that are mediated by the long-range In-Se Coulomb interaction across the van der Waals gap and soft intralayer In-Se bonding. We propose a combinatory deformability indicator (Ξ) to prescreen candidate bulk semiconductors for use in next-generation deformable or flexible electronics.
Bibliographie:	ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23
ISSN:	1095-9203 1095-9203
DOI:	10.1126/science.aba9778