XNOR-SRAM: In-Memory Computing SRAM Macro for Binary/Ternary Deep Neural Networks
We present XNOR-SRAM, a mixed-signal in-memory computing (IMC) SRAM macro that computes ternary-XNOR-and-accumulate (XAC) operations in binary/ternary deep neural networks (DNNs) without row-by-row data access. The XNOR-SRAM bitcell embeds circuits for ternary XNOR operations, which are accumulated...
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| Vydáno v: | IEEE journal of solid-state circuits Ročník 55; číslo 6; s. 1733 - 1743 |
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| Hlavní autoři: | , , , |
| Médium: | Journal Article |
| Jazyk: | angličtina |
| Vydáno: |
New York
IEEE
01.06.2020
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Témata: | |
| ISSN: | 0018-9200, 1558-173X |
| On-line přístup: | Získat plný text |
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| Shrnutí: | We present XNOR-SRAM, a mixed-signal in-memory computing (IMC) SRAM macro that computes ternary-XNOR-and-accumulate (XAC) operations in binary/ternary deep neural networks (DNNs) without row-by-row data access. The XNOR-SRAM bitcell embeds circuits for ternary XNOR operations, which are accumulated on the read bitline (RBL) by simultaneously turning on all 256 rows, essentially forming a resistive voltage divider. The analog RBL voltage is digitized with a column-multiplexed 11-level flash analog-to-digital converter (ADC) at the XNOR-SRAM periphery. XNOR-SRAM is prototyped in a 65-nm CMOS and achieves the energy efficiency of 403 TOPS/W for ternary-XAC operations with 88.8% test accuracy for the CIFAR-10 data set at 0.6-V supply. This marks <inline-formula> <tex-math notation="LaTeX">33\times </tex-math></inline-formula> better energy efficiency and <inline-formula> <tex-math notation="LaTeX">300\times </tex-math></inline-formula> better energy-delay product than conventional digital hardware and also represents among the best tradeoff in energy efficiency and DNN accuracy. |
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| Bibliografie: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 14 |
| ISSN: | 0018-9200 1558-173X |
| DOI: | 10.1109/JSSC.2019.2963616 |