Improving Multi-Level NAND Flash Memory Storage Reliability Using Concatenated BCH-TCM Coding

By storing more than one bit in each memory cell, multi-level per cell (MLC) NAND flash memories are dominating global flash memory market due to their appealing storage density advantage. However, continuous technology scaling makes MLC NAND flash memories increasingly subject to worse raw storage...

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Vydáno v:	IEEE transactions on very large scale integration (VLSI) systems Ročník 18; číslo 10; s. 1412 - 1420
Hlavní autoři:	Li, Shu, Zhang, Tong
Médium:	Journal Article
Jazyk:	angličtina
Vydáno:	New York, NY IEEE 01.10.2010 Institute of Electrical and Electronics Engineers The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Témata:	Applied sciences BCH codes Bit error rate Circuit properties Coding Computer simulation Concatenated codes Costs Demodulation Density Design engineering Design. Technologies. Operation analysis. Testing Digital circuits Electric, optical and optoelectronic circuits Electronic circuits Electronics Error correction codes Error rate Exact sciences and technology Fault tolerance Flash memory Flash memory (computers) hardware cost Integrated circuits Integrated circuits by function (including memories and processors) Magnetic and optical mass memories Markets Memory Modulation coding Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductors Silicon Storage and reproduction of information Studies throughput trellis-coded modulation (TCM) Very large scale integration Performance evaluation hardware cost Memory devices Bit error rate Error rate trellis-coded modulation (TCM) Static storage Implementation Logic circuit Fault tolerance Non volatile memory Coding Recording density Trellis coded modulation Silicon throughput Multilevel system NAND circuit Computer simulation Flash memory Integrated circuit Error correction Miniaturization Reliability Custom circuit Demodulation
ISSN:	1063-8210, 1557-9999
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