Citace podle APA (7th ed.)

Li, S., & Zhang, T. (2010). Improving Multi-Level NAND Flash Memory Storage Reliability Using Concatenated BCH-TCM Coding. IEEE transactions on very large scale integration (VLSI) systems, 18(10), 1412-1420. https://doi.org/10.1109/TVLSI.2009.2024154

Citace podle Chicago (17th ed.)

Li, Shu, a Tong Zhang. "Improving Multi-Level NAND Flash Memory Storage Reliability Using Concatenated BCH-TCM Coding." IEEE Transactions on Very Large Scale Integration (VLSI) Systems 18, no. 10 (2010): 1412-1420. https://doi.org/10.1109/TVLSI.2009.2024154.

Citace podle MLA (9th ed.)

Li, Shu, a Tong Zhang. "Improving Multi-Level NAND Flash Memory Storage Reliability Using Concatenated BCH-TCM Coding." IEEE Transactions on Very Large Scale Integration (VLSI) Systems, vol. 18, no. 10, 2010, pp. 1412-1420, https://doi.org/10.1109/TVLSI.2009.2024154.

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