APA (7th ed.) Citation

Li, S., & Zhang, T. (2010). Improving Multi-Level NAND Flash Memory Storage Reliability Using Concatenated BCH-TCM Coding. IEEE transactions on very large scale integration (VLSI) systems, 18(10), 1412-1420. https://doi.org/10.1109/TVLSI.2009.2024154

Chicago Style (17th ed.) Citation

Li, Shu, and Tong Zhang. "Improving Multi-Level NAND Flash Memory Storage Reliability Using Concatenated BCH-TCM Coding." IEEE Transactions on Very Large Scale Integration (VLSI) Systems 18, no. 10 (2010): 1412-1420. https://doi.org/10.1109/TVLSI.2009.2024154.

MLA (9th ed.) Citation

Li, Shu, and Tong Zhang. "Improving Multi-Level NAND Flash Memory Storage Reliability Using Concatenated BCH-TCM Coding." IEEE Transactions on Very Large Scale Integration (VLSI) Systems, vol. 18, no. 10, 2010, pp. 1412-1420, https://doi.org/10.1109/TVLSI.2009.2024154.