Milliwatt power UV-A LEDs developed by using n-AlGaN superlattice buffer layers grown on AlN templates

Ultraviolet (UV)-A light-emitting diode (LED) light sources are strongly demanded for both medical and photochemical applications. In our previous report, we investigated the conventional n-AlGaN buffer layer (BL)-based UV-A LED devices and a very low output power was achieved. In this work, we aim...

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Veröffentlicht in:	Journal of physics. D, Applied physics Jg. 52; H. 11
Hauptverfasser:	Matsumoto, Takuma, Ajmal Khan, M, Maeda, Noritoshi, Fujikawa, Sachie, Kamata, Norihiko, Hirayama, Hideki
Format:	Journal Article
Sprache:	Englisch
Veröffentlicht:	IOP Publishing 13.03.2019
Schlagworte:	low-pressure metalorganic vapor-phase epitaxy p-AlGaN semiconducting AlGaN superlattices TDDs in n-AlGaN UV-A LED
ISSN:	0022-3727, 1361-6463
Online-Zugang:	Volltext
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