Milliwatt power UV-A LEDs developed by using n-AlGaN superlattice buffer layers grown on AlN templates

Ultraviolet (UV)-A light-emitting diode (LED) light sources are strongly demanded for both medical and photochemical applications. In our previous report, we investigated the conventional n-AlGaN buffer layer (BL)-based UV-A LED devices and a very low output power was achieved. In this work, we aim...

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Vydáno v:Journal of physics. D, Applied physics Ročník 52; číslo 11
Hlavní autoři: Matsumoto, Takuma, Ajmal Khan, M, Maeda, Noritoshi, Fujikawa, Sachie, Kamata, Norihiko, Hirayama, Hideki
Médium: Journal Article
Jazyk:angličtina
Vydáno: IOP Publishing 13.03.2019
Témata:
low-pressure metalorganic vapor-phase epitaxy
p-AlGaN
semiconducting AlGaN
superlattices
TDDs in n-AlGaN
UV-A LED
ISSN:0022-3727, 1361-6463
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Shrnutí:Ultraviolet (UV)-A light-emitting diode (LED) light sources are strongly demanded for both medical and photochemical applications. In our previous report, we investigated the conventional n-AlGaN buffer layer (BL)-based UV-A LED devices and a very low output power was achieved. In this work, we aim for the suppression of vertically propagating threading dislocation densities (TDDs) in the n-AlGaN BL including the current spreading layer (CSL) by introducing Si-doped n-Al0.37Ga0.63N/n-Al0.27Ga0.73N superlattices (SLs) between the AlN template and n-AlGaN BL for the demonstration of 341 nm UV-A LEDs. When the conventional n-AlGaN BLs were replaced with n-AlGaN SL-based BLs (with a suitable number of periods up to ~70) in the UV-A multi-quantum wells, then the full width at half maximum of the x-ray rocking curves in the n-AlGaN CSL for the (0 0 0 2) and (10-12) planes, respectively, were reduced to 346 and 431 arcsec and the total TDDs were suppressed to approximately ~1  ×  109 cm−2. Finally, when the conventional Ni (20 nm)/Au (150 nm) p-electrodes were replaced with new Ni (1 nm)/Mg (200 nm) p-electrodes in the n-AlGaN SL-based UV-A LEDs, the maximum output power was improved from 2.1 to 2.5 mW.
Bibliografie:JPhysD-117335.R4
ISSN:0022-3727
1361-6463
DOI:10.1088/1361-6463/aaf60a