Milliwatt power UV-A LEDs developed by using n-AlGaN superlattice buffer layers grown on AlN templates

Ultraviolet (UV)-A light-emitting diode (LED) light sources are strongly demanded for both medical and photochemical applications. In our previous report, we investigated the conventional n-AlGaN buffer layer (BL)-based UV-A LED devices and a very low output power was achieved. In this work, we aim...

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Published in:	Journal of physics. D, Applied physics Vol. 52; no. 11
Main Authors:	Matsumoto, Takuma, Ajmal Khan, M, Maeda, Noritoshi, Fujikawa, Sachie, Kamata, Norihiko, Hirayama, Hideki
Format:	Journal Article
Language:	English
Published:	IOP Publishing 13.03.2019
Subjects:	low-pressure metalorganic vapor-phase epitaxy p-AlGaN semiconducting AlGaN superlattices TDDs in n-AlGaN UV-A LED
ISSN:	0022-3727, 1361-6463
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Abstract	Ultraviolet (UV)-A light-emitting diode (LED) light sources are strongly demanded for both medical and photochemical applications. In our previous report, we investigated the conventional n-AlGaN buffer layer (BL)-based UV-A LED devices and a very low output power was achieved. In this work, we aim for the suppression of vertically propagating threading dislocation densities (TDDs) in the n-AlGaN BL including the current spreading layer (CSL) by introducing Si-doped n-Al0.37Ga0.63N/n-Al0.27Ga0.73N superlattices (SLs) between the AlN template and n-AlGaN BL for the demonstration of 341 nm UV-A LEDs. When the conventional n-AlGaN BLs were replaced with n-AlGaN SL-based BLs (with a suitable number of periods up to ~70) in the UV-A multi-quantum wells, then the full width at half maximum of the x-ray rocking curves in the n-AlGaN CSL for the (0 0 0 2) and (10-12) planes, respectively, were reduced to 346 and 431 arcsec and the total TDDs were suppressed to approximately ~1 × 109 cm−2. Finally, when the conventional Ni (20 nm)/Au (150 nm) p-electrodes were replaced with new Ni (1 nm)/Mg (200 nm) p-electrodes in the n-AlGaN SL-based UV-A LEDs, the maximum output power was improved from 2.1 to 2.5 mW.
AbstractList	Ultraviolet (UV)-A light-emitting diode (LED) light sources are strongly demanded for both medical and photochemical applications. In our previous report, we investigated the conventional n-AlGaN buffer layer (BL)-based UV-A LED devices and a very low output power was achieved. In this work, we aim for the suppression of vertically propagating threading dislocation densities (TDDs) in the n-AlGaN BL including the current spreading layer (CSL) by introducing Si-doped n-Al0.37Ga0.63N/n-Al0.27Ga0.73N superlattices (SLs) between the AlN template and n-AlGaN BL for the demonstration of 341 nm UV-A LEDs. When the conventional n-AlGaN BLs were replaced with n-AlGaN SL-based BLs (with a suitable number of periods up to ~70) in the UV-A multi-quantum wells, then the full width at half maximum of the x-ray rocking curves in the n-AlGaN CSL for the (0 0 0 2) and (10-12) planes, respectively, were reduced to 346 and 431 arcsec and the total TDDs were suppressed to approximately ~1 × 109 cm−2. Finally, when the conventional Ni (20 nm)/Au (150 nm) p-electrodes were replaced with new Ni (1 nm)/Mg (200 nm) p-electrodes in the n-AlGaN SL-based UV-A LEDs, the maximum output power was improved from 2.1 to 2.5 mW.
Author	Fujikawa, Sachie Maeda, Noritoshi Matsumoto, Takuma Ajmal Khan, M Kamata, Norihiko Hirayama, Hideki
Author_xml	– sequence: 1 givenname: Takuma surname: Matsumoto fullname: Matsumoto, Takuma organization: Saitama University , 255 Shimo-Okubo, Sakura-ku, Saitama City, Saitama 338-8570, Japan – sequence: 2 givenname: M orcidid: 0000-0002-5171-6215 surname: Ajmal Khan fullname: Ajmal Khan, M email: muhammad.khan@riken.jp, m_ajmal_khan@yahoo.com organization: RIKEN Center for Advanced Photonics (RAP) , 2-1 Hirosawa, Wako-shi, Saitama 351-0198, Japan – sequence: 3 givenname: Noritoshi surname: Maeda fullname: Maeda, Noritoshi organization: RIKEN Center for Advanced Photonics (RAP) , 2-1 Hirosawa, Wako-shi, Saitama 351-0198, Japan – sequence: 4 givenname: Sachie surname: Fujikawa fullname: Fujikawa, Sachie organization: Tokyo Denki University , 5 Senju-Asahi-cho, Adachi-ku, Tokyo 120-8551, Japan – sequence: 5 givenname: Norihiko surname: Kamata fullname: Kamata, Norihiko organization: Saitama University , 255 Shimo-Okubo, Sakura-ku, Saitama City, Saitama 338-8570, Japan – sequence: 6 givenname: Hideki surname: Hirayama fullname: Hirayama, Hideki organization: RIKEN Center for Advanced Photonics (RAP) , 2-1 Hirosawa, Wako-shi, Saitama 351-0198, Japan
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Snippet	Ultraviolet (UV)-A light-emitting diode (LED) light sources are strongly demanded for both medical and photochemical applications. In our previous report, we...
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Title	Milliwatt power UV-A LEDs developed by using n-AlGaN superlattice buffer layers grown on AlN templates
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