Reduced Dislocation Density of an InP/GaAs Virtual Substrate Grown by Metalorganic Chemical Vapor Deposition
Integrating indium phosphide (InP) material on a gallium arsenide (GaAs) substrate to form an InP/GaAs virtual substrate has been an attractive research subject over the past decade. However, the epitaxial growth of InP on GaAs is challenging due to a large mismatch in the lattice constant and therm...
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| Abstract | Integrating indium phosphide (InP) material on a gallium arsenide (GaAs) substrate to form an InP/GaAs virtual substrate has been an attractive research subject over the past decade. However, the epitaxial growth of InP on GaAs is challenging due to a large mismatch in the lattice constant and thermal expansion coefficient. This paper describes the successful hetero-epitaxy of InP on a GaAs substrate by metalorganic chemical vapor deposition. The hetero-epitaxy in this study utilized a hybrid growth method involving a thin indium gallium arsenide (InGaAs) linearly graded buffer, two-step InP growth, and a post-annealing process. Transmission electron microscopic observations showed that a traditional two-step InP/GaAs virtual substrate was smooth but had a high threading dislocation density (TDD) of 1.5 × 109 cm−2 near the InP surface. The high TDD value can be reduced to 2.3 × 108 cm−2 by growing the two-step InP on a thin InGaAs linearly graded buffer. The TDD of an InP/GaAs virtual substrate can be further improved to the value of 1.5 × 107 cm−2 by removing the low-temperature InP nucleation layer and carrying out a post-annealing process. A possible reason for the improvement in TDD may relate to a dislocation interaction such as the annihilation of mobile threading dislocations. Room-temperature photoluminescence spectra of InP/GaAs virtual substrates with different TDD values were compared in this study. The optical and micro-structural characterization results suggest that the proposed growth method may be feasible for making good-quality and relatively low-cost InP/GaAs virtual substrates for the integration of optoelectronic devices on them. |
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| AbstractList | Integrating indium phosphide (InP) material on a gallium arsenide (GaAs) substrate to form an InP/GaAs virtual substrate has been an attractive research subject over the past decade. However, the epitaxial growth of InP on GaAs is challenging due to a large mismatch in the lattice constant and thermal expansion coefficient. This paper describes the successful hetero-epitaxy of InP on a GaAs substrate by metalorganic chemical vapor deposition. The hetero-epitaxy in this study utilized a hybrid growth method involving a thin indium gallium arsenide (InGaAs) linearly graded buffer, two-step InP growth, and a post-annealing process. Transmission electron microscopic observations showed that a traditional two-step InP/GaAs virtual substrate was smooth but had a high threading dislocation density (TDD) of 1.5 × 109 cm−2 near the InP surface. The high TDD value can be reduced to 2.3 × 108 cm−2 by growing the two-step InP on a thin InGaAs linearly graded buffer. The TDD of an InP/GaAs virtual substrate can be further improved to the value of 1.5 × 107 cm−2 by removing the low-temperature InP nucleation layer and carrying out a post-annealing process. A possible reason for the improvement in TDD may relate to a dislocation interaction such as the annihilation of mobile threading dislocations. Room-temperature photoluminescence spectra of InP/GaAs virtual substrates with different TDD values were compared in this study. The optical and micro-structural characterization results suggest that the proposed growth method may be feasible for making good-quality and relatively low-cost InP/GaAs virtual substrates for the integration of optoelectronic devices on them. Integrating indium phosphide (InP) material on a gallium arsenide (GaAs) substrate to form an InP/GaAs virtual substrate has been an attractive research subject over the past decade. However, the epitaxial growth of InP on GaAs is challenging due to a large mismatch in the lattice constant and thermal expansion coefficient. This paper describes the successful hetero-epitaxy of InP on a GaAs substrate by metalorganic chemical vapor deposition. The hetero-epitaxy in this study utilized a hybrid growth method involving a thin indium gallium arsenide (InGaAs) linearly graded buffer, two-step InP growth, and a post-annealing process. Transmission electron microscopic observations showed that a traditional two-step InP/GaAs virtual substrate was smooth but had a high threading dislocation density (TDD) of 1.5 × 10[sup.9] cm[sup.−2] near the InP surface. The high TDD value can be reduced to 2.3 × 10[sup.8] cm[sup.−2] by growing the two-step InP on a thin InGaAs linearly graded buffer. The TDD of an InP/GaAs virtual substrate can be further improved to the value of 1.5 × 10[sup.7] cm[sup.−2] by removing the low-temperature InP nucleation layer and carrying out a post-annealing process. A possible reason for the improvement in TDD may relate to a dislocation interaction such as the annihilation of mobile threading dislocations. Room-temperature photoluminescence spectra of InP/GaAs virtual substrates with different TDD values were compared in this study. The optical and micro-structural characterization results suggest that the proposed growth method may be feasible for making good-quality and relatively low-cost InP/GaAs virtual substrates for the integration of optoelectronic devices on them. |
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| Author | Tsai, Yu-Li Wu, Chih-Hung |
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| SubjectTerms | Analysis Annealing Buffers Chemical vapor deposition Computational grids Dislocation density Dislocation mobility Epitaxial growth Epitaxy Gallium arsenide Indium Indium gallium arsenides Indium phosphides Intermetallic compounds Lattice parameters Low temperature Metalorganic chemical vapor deposition Methods Microscopy Misfit dislocations Nucleation Optoelectronic devices Photoluminescence Room temperature Structural analysis Substrates Thermal expansion Threading dislocations |
| Title | Reduced Dislocation Density of an InP/GaAs Virtual Substrate Grown by Metalorganic Chemical Vapor Deposition |
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