Tsai, Y., & Wu, C. (2022). Reduced Dislocation Density of an InP/GaAs Virtual Substrate Grown by Metalorganic Chemical Vapor Deposition. Coatings (Basel), 12(6), 723. https://doi.org/10.3390/coatings12060723
Citácia podle Chicago (17th ed.)Tsai, Yu-Li, a Chih-Hung Wu. "Reduced Dislocation Density of an InP/GaAs Virtual Substrate Grown by Metalorganic Chemical Vapor Deposition." Coatings (Basel) 12, no. 6 (2022): 723. https://doi.org/10.3390/coatings12060723.
Citácia podľa MLA (8th ed.)Tsai, Yu-Li, a Chih-Hung Wu. "Reduced Dislocation Density of an InP/GaAs Virtual Substrate Grown by Metalorganic Chemical Vapor Deposition." Coatings (Basel), vol. 12, no. 6, 2022, p. 723, https://doi.org/10.3390/coatings12060723.
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