Performance enhancement of AlGaN deep-ultraviolet laser diode using compositional Al-grading of Si-doped layers

•Compositional grading of AlGaN layers is used to increase the optical confinement factor (OCF), and gain of DUV LD.•Compositional grading of waveguides (WGs), electron blocking layer (EBL), and cladding layers (CLs) demonstrated that the device characteristic can be improved.•Along with WGs and EBL...

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Vydané v:Optics and laser technology Ročník 152; s. 108156
Hlavní autori: Sharif, Muhammad Nawaz, Ajmal Khan, M., Wali, Qamar, Demir, Ilkay, Wang, Fang, Liu, Yuhuai
Médium: Journal Article
Jazyk:English
Vydavateľské údaje: Kidlington Elsevier Ltd 01.08.2022
Elsevier BV
Predmet:
Aluminum gallium nitrides
Carrier injection
Cladding layer
Compositional grading of AlGaN
Confinement
Current density
Deep-ultraviolet laser diode
Performance enhancement
Semiconductor lasers
Silicon
Threshold currents
Ultraviolet lasers
Waveguide layer
Waveguides
Deep-ultraviolet laser diode
Compositional grading of AlGaN
Cladding layer
Waveguide layer
ISSN:0030-3992, 1879-2545
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Shrnutí:•Compositional grading of AlGaN layers is used to increase the optical confinement factor (OCF), and gain of DUV LD.•Compositional grading of waveguides (WGs), electron blocking layer (EBL), and cladding layers (CLs) demonstrated that the device characteristic can be improved.•Along with WGs and EBL grading Si-doped CL improved the OCF and gain of DUV LD. Achieving high threshold current density and high optical confinement are big challenges in the realization of high-performance aluminum gallium nitride (AlGaN)-based deep-ultraviolet (DUV) laser diode (LD). In this work, compositional Al-grading of AlGaN layers is used to increase the optical confinement factor (OCF), carrier injection efficiency, gain, and emission power of the DUV LD. Compositional grading of waveguides (WGs) layer, electron blocking layer (EBL), and cladding layers (CLs) demonstrated that the device characteristic can be improved. By using compositional Al-grading of AlGaN p-WG, EBL, p-CL along with n-WG and n-CL, 17.4% OCF, 94.4 mW emission power, and 1369 m−1 gain at 267 nm peak emission wavelength are achieved. These improvements are attributed to the reduced threshold current density as well as using better optical confinement scheme in the DUV LD.
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ISSN:0030-3992
1879-2545
DOI:10.1016/j.optlastec.2022.108156