Phonon thermal transport and its tunability in GaN for near-junction thermal management of electronics: A review

•Heat dissipation issues at near-junction region of GaN HEMT are reviewed comprehensively.•Phonon transport properties in GaN and GaN nanostructures are discussed based on both computations and experiments.•Phonon transport tuning mechanisms in perspectives of particle, wave, and topological nature...

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Bibliographic Details
Published in:International journal of heat and mass transfer Vol. 200; p. 123497
Main Authors: Tang, Dao-Sheng, Cao, Bing-Yang
Format: Journal Article
Language:English
Published: Elsevier Ltd 01.01.2023
ISSN:0017-9310, 1879-2189
Online Access:Get full text
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