Hall characterization of epitaxial GaSb and AlGaAsSb layers using p-n junctions on GaSb substrates

•Hall methodology for antimonides, grown on conducting GaSb substrates.•Comparison of the GaSb Hall layer morphologies, grown on GaSb versus GaAs.•Comparison of Hall properties of p- and n-GaSb, grown on GaSb versus GaAs.•Successful Hall measurements of p-AlGaAsSb layers grown on GaSb. The Hall Van-...

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Vydáno v:Journal of crystal growth Ročník 496-497; s. 36 - 42
Hlavní autoři: Predan, F., Ohlmann, J., Mrabet, S., Dimroth, F., Lackner, D.
Médium: Journal Article
Jazyk:angličtina
Vydáno: Amsterdam Elsevier B.V 01.08.2018
Elsevier BV
Témata:
A1 Doping
A1 Hall measurements
A1 Majority carrier properties
A3 Metalorganicvapor phase epitaxy
Antimonides
B1 Antimonides
B1 Gallium compounds
Carrier density
Design defects
Electrical junctions
Electrical properties
Gallium antimonide
Gallium antimonides
Gallium arsenide
Hall effect
Lattice matching
Majority carriers
P-n junctions
Semiconductor doping
Semiconductors
Substrates
A1 Majority carrier properties
A3 Metalorganicvapor phase epitaxy
A1 Hall measurements
B1 Gallium compounds
A1 Doping
B1 Antimonides
ISSN:0022-0248, 1873-5002
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Shrnutí:•Hall methodology for antimonides, grown on conducting GaSb substrates.•Comparison of the GaSb Hall layer morphologies, grown on GaSb versus GaAs.•Comparison of Hall properties of p- and n-GaSb, grown on GaSb versus GaAs.•Successful Hall measurements of p-AlGaAsSb layers grown on GaSb. The Hall Van-der-Pauw method is widely used to assess the electrical properties of GaSb based semiconductor layers. Semi-insulating GaSb substrates are not available, and therefore, Hall structures are generally grown on semi-insulating GaAs. The lattice mismatch of 7.8% between GaAs and GaSb results in high defect densities, which may influence the measurement. We investigated an alternative approach for Hall effect measurements using a p-n junction for the electrical isolation of the test layer from layers below. This allows antimonide based test layers with low defect density grown lattice-matched on GaSb substrates to be analyzed. Negligible leakage currents across the p-n junctions are key to ensure significant measurement results. n- and p-GaSb layers show similar carrier concentration if grown on GaSb or semi-insulating GaAs, with the exception of highly n-doped layers >5x1017cm−3. However, majority carrier mobilities were systematically higher on GaSb substrate, explained by a lower density of structural defects. Furthermore, the sample design with p-n junction enabled Hall effect measurements of quaternary p-Al0.2Ga0.8As0.02Sb0.98 layers, which was impossible for those same layers grown on GaAs due to strain induced phase-separation. The methodology is presented for antimonides, but it is applicable to a wide range of material systems including metamorphic structures.
Bibliografie:ObjectType-Article-1
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ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2018.05.023