Hall characterization of epitaxial GaSb and AlGaAsSb layers using p-n junctions on GaSb substrates

•Hall methodology for antimonides, grown on conducting GaSb substrates.•Comparison of the GaSb Hall layer morphologies, grown on GaSb versus GaAs.•Comparison of Hall properties of p- and n-GaSb, grown on GaSb versus GaAs.•Successful Hall measurements of p-AlGaAsSb layers grown on GaSb. The Hall Van-...

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Vydané v:	Journal of crystal growth Ročník 496-497; s. 36 - 42
Hlavní autori:	Predan, F., Ohlmann, J., Mrabet, S., Dimroth, F., Lackner, D.
Médium:	Journal Article
Jazyk:	English
Vydavateľské údaje:	Amsterdam Elsevier B.V 01.08.2018 Elsevier BV
Predmet:	A1 Doping A1 Hall measurements A1 Majority carrier properties A3 Metalorganicvapor phase epitaxy Antimonides B1 Antimonides B1 Gallium compounds Carrier density Design defects Electrical junctions Electrical properties Gallium antimonide Gallium antimonides Gallium arsenide Hall effect Lattice matching Majority carriers P-n junctions Semiconductor doping Semiconductors Substrates A1 Majority carrier properties A3 Metalorganicvapor phase epitaxy A1 Hall measurements B1 Gallium compounds A1 Doping B1 Antimonides
ISSN:	0022-0248, 1873-5002
On-line prístup:	Získať plný text
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