Berry Phase of Phonons and Thermal Hall Effect in Nonmagnetic Insulators
A mechanism for the phonon Hall effect (PHE) in nonmagnetic insulators under an external magnetic field is theoretically studied. PHE is known in (para)magnetic compounds, where the magnetic moments and spin-orbit interaction play an essential role. In sharp contrast, we here discuss that the PHE al...
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| Vydané v: | Physical review letters Ročník 123; číslo 25; s. 255901 |
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| Hlavní autori: | , , , |
| Médium: | Journal Article |
| Jazyk: | English |
| Vydavateľské údaje: |
United States
American Physical Society
20.12.2019
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| Predmet: | |
| ISSN: | 0031-9007, 1079-7114, 1079-7114 |
| On-line prístup: | Získať plný text |
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| Shrnutí: | A mechanism for the phonon Hall effect (PHE) in nonmagnetic insulators under an external magnetic field is theoretically studied. PHE is known in (para)magnetic compounds, where the magnetic moments and spin-orbit interaction play an essential role. In sharp contrast, we here discuss that the PHE also occurs in nonmagnetic band insulators subject to the magnetic field. We find that a correction to the Born-Oppenheimer approximation gives rise to a Raman-type interaction between the magnetic field and the phonons; this interaction gives rise to the Berry curvature of a phonon band. This Berry curvature results in the finite thermal Hall conductivity κ_{H} in nonmagnetic band insulators. The value of κ_{H} is calculated for square and honeycomb lattices. The order of the magnitude estimation for κ_{H} is given for Si at room temperature. |
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| Bibliografia: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 14 content type line 23 |
| ISSN: | 0031-9007 1079-7114 1079-7114 |
| DOI: | 10.1103/PhysRevLett.123.255901 |