A 128 Gb/s PAM4 Silicon Microring Modulator With Integrated Thermo-Optic Resonance Tuning

We report the first demonstration of a silicon photonic microring modulator with modulation data rate up to 128 Gb/s (64 Gbaud PAM4). The microring modulator exhibits an electro-optic phase efficiency of V π · L = 0.52 V·cm, an electro-optic bandwidth of 50 GHz, and a measured transmitter dispersion...

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Vydané v:	Journal of lightwave technology Ročník 37; číslo 1; s. 110 - 115
Hlavní autori:	Jie Sun, Kumar, Ranjeet, Sakib, Meer, Driscoll, Jeffrey B., Jayatilleka, Hasitha, Haisheng Rong
Médium:	Journal Article
Jazyk:	English
Vydavateľské údaje:	New York IEEE 01.01.2019 The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Predmet:	Bandwidth Electro-optic modulators Electrooptic modulators integrated optoelectronics Junctions Optical device fabrication optical interconnects optical transmitters Optical waveguides Photonics photonics integrated circuits Silicon silicon photonics
ISSN:	0733-8724, 1558-2213
On-line prístup:	Získať plný text
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