A 128 Gb/s PAM4 Silicon Microring Modulator With Integrated Thermo-Optic Resonance Tuning

We report the first demonstration of a silicon photonic microring modulator with modulation data rate up to 128 Gb/s (64 Gbaud PAM4). The microring modulator exhibits an electro-optic phase efficiency of V π · L = 0.52 V·cm, an electro-optic bandwidth of 50 GHz, and a measured transmitter dispersion...

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Veröffentlicht in:Journal of lightwave technology Jg. 37; H. 1; S. 110 - 115
Hauptverfasser: Jie Sun, Kumar, Ranjeet, Sakib, Meer, Driscoll, Jeffrey B., Jayatilleka, Hasitha, Haisheng Rong
Format: Journal Article
Sprache:Englisch
Veröffentlicht: New York IEEE 01.01.2019
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Schlagworte:
Bandwidth
Electro-optic modulators
Electrooptic modulators
integrated optoelectronics
Junctions
Optical device fabrication
optical interconnects
optical transmitters
Optical waveguides
Photonics
photonics integrated circuits
Silicon
silicon photonics
ISSN:0733-8724, 1558-2213
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Zusammenfassung:We report the first demonstration of a silicon photonic microring modulator with modulation data rate up to 128 Gb/s (64 Gbaud PAM4). The microring modulator exhibits an electro-optic phase efficiency of V π · L = 0.52 V·cm, an electro-optic bandwidth of 50 GHz, and a measured transmitter dispersion eye closure quaternary of 3.0 dB at this data rate. In addition, the resonant wavelength of the microring modulator can be tuned across a full free spectral range using an integrated heater with a thermo-optic phase efficiency of 19.5 mW/π-phase shift.
Bibliographie:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 14
ISSN:0733-8724
1558-2213
DOI:10.1109/JLT.2018.2878327