Low-Temperature Fabrication of BiFeO3 Films on Aluminum Foils under a N2-Rich Atmosphere

To be CMOS-compatible, a low preparation temperature (<500 °C) for ferroelectric films is required. In this study, BiFeO3 films were successfully fabricated at a low annealing temperature (<450 °C) on aluminum foils by a metal–organic decomposition process. The effect of the annealing atmosphe...

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Bibliographic Details
Published in:	Nanomaterials (Basel, Switzerland) Vol. 14; no. 16; p. 1343
Main Author:	Yan, Jing
Format:	Journal Article
Language:	English
Published:	Basel MDPI AG 14.08.2024 MDPI
Subjects:	Aluminum aluminum foil Annealing Atmosphere BiFeO3 Electric fields Electrical properties Electrodes Fabrication Fatigue strength Ferroelectric materials Ferroelectricity Grain boundaries Grain growth Grain size Low temperature Metal foils N2-rich atmosphere Substrates Temperature Temperature requirements Thin films United States > US Japan
ISSN:	2079-4991, 2079-4991
Online Access:	Get full text
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