Low-Temperature Fabrication of BiFeO3 Films on Aluminum Foils under a N2-Rich Atmosphere

To be CMOS-compatible, a low preparation temperature (<500 °C) for ferroelectric films is required. In this study, BiFeO3 films were successfully fabricated at a low annealing temperature (<450 °C) on aluminum foils by a metal–organic decomposition process. The effect of the annealing atmosphe...

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Vydáno v:Nanomaterials (Basel, Switzerland) Ročník 14; číslo 16; s. 1343
Hlavní autor: Yan, Jing
Médium: Journal Article
Jazyk:angličtina
Vydáno: Basel MDPI AG 14.08.2024
MDPI
Témata:
Aluminum
aluminum foil
Annealing
Atmosphere
BiFeO3
Electric fields
Electrical properties
Electrodes
Fabrication
Fatigue strength
Ferroelectric materials
Ferroelectricity
Grain boundaries
Grain growth
Grain size
Low temperature
Metal foils
N2-rich atmosphere
Substrates
Temperature
Temperature requirements
Thin films
United States > US
Japan
ISSN:2079-4991, 2079-4991
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Shrnutí:To be CMOS-compatible, a low preparation temperature (<500 °C) for ferroelectric films is required. In this study, BiFeO3 films were successfully fabricated at a low annealing temperature (<450 °C) on aluminum foils by a metal–organic decomposition process. The effect of the annealing atmosphere on the performance of BiFeO3 films was assessed at 440 ± 5 °C. By using a N2-rich atmosphere, a large remnant polarization (Pr~78.1 μC/cm2 @ 1165.2 kV/cm), and a high rectangularity (~91.3% @ 1165.2 kV/cm) of the P-E loop, excellent charge-retaining ability of up to 1.0 × 103 s and outstanding fatigue resistance after 1.0 × 109 switching cycles could be observed. By adopting a N2-rich atmosphere and aluminum foil substrates, acceptable electrical properties (Pr~70 μC/cm2 @ 1118.1 kV/cm) of the BiFeO3 films were achieved at the very low annealing temperature of 365 ± 5 °C. These results offer a new approach for lowering the annealing temperature for integrated ferroelectrics in high-density FeRAM applications.
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ISSN:2079-4991
2079-4991
DOI:10.3390/nano14161343