A Mixed Method for the Mixed Initial Boundary Value Problems of Equations of Semiconductor Devices

In this article, the approximation of nonstationary equations of the semiconductor device with mixed boundary conditions is considered. The approximate procedure of this system using a Galerkin method that makes use of a mixed finite element method for the potential equation combined with a finite e...

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Bibliographic Details
Published in:	SIAM journal on numerical analysis Vol. 31; no. 3; pp. 731 - 744
Main Authors:	Zhu, Jiang, Wu, Hongwei, Wang, Yuanming
Format:	Journal Article
Language:	English
Published:	Philadelphia, PA Society for Industrial and Applied Mathematics 01.06.1994
Subjects:	426000 - Engineering- Components, Electron Devices & Circuits- (1990-) 990200 - Mathematics & Computers Approximation Boundary conditions BOUNDARY-VALUE PROBLEMS CALCULATION METHODS CARRIER MOBILITY ENGINEERING Exact sciences and technology Finite element analysis Finite element method GALERKIN-PETROV METHOD GENERAL AND MISCELLANEOUS//MATHEMATICS, COMPUTING, AND INFORMATION SCIENCE ITERATIVE METHODS Mathematical methods in physics MATHEMATICAL MODELS Mathematical procedures MOBILITY Numerical approximation and analysis Ordinary and partial differential equations, boundary value problems Physics SEMICONDUCTOR DEVICES Semiconductors Sobolev spaces Uniqueness Finite element method Semiconductor devices Sobolev space Initial value problem Boundary-value problems Galerkin method Mixed method
ISSN:	0036-1429, 1095-7170
Online Access:	Get full text
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