Donor impurity in vertically-coupled quantum-dots under hydrostatic pressure and applied electric field

In this work we make a predictive study on the binding energy of the ground state for hydrogenic donor impurity in vertically-coupled quantum-dot structure, considering the combined effects of hydrostatic pressure and in growth-direction applied electric field. The approach uses a variational method...

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Vydáno v:	The European physical journal. B, Condensed matter physics Ročník 73; číslo 3; s. 309 - 319
Hlavní autoři:	Duque, C. M., Barseghyan, M. G., Duque, C. A.
Médium:	Journal Article
Jazyk:	angličtina
Vydáno:	Berlin/Heidelberg Springer-Verlag 01.02.2010 EDP Sciences
Témata:	Complex Systems Condensed Matter Physics Condensed matter: electronic structure, electrical, magnetic, and optical properties Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Fluid- and Aerodynamics Physics Physics and Astronomy Quantum dots Solid State and Materials Solid State Physics Binding Energy Electron Wave Function Hydrostatic Pressure Aluminum Concentration Quantum Well Defect states Gallium arsenides Potential barrier Pressure effects Variational methods Quantum dots Aluminium Gallium Arsenides Mixed Effective mass model Phenomenological model H-like ions Impurities Electric field effects Binding energy Hydrostatic pressure Wave functions Donor center
ISSN:	1434-6028, 1434-6036
On-line přístup:	Získat plný text
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