Computational fluid dynamics modeling of a discrete feed atomic layer deposition reactor: Application to reactor design and operation

Novel transistor fabrication methods such as area-selective atomic layer deposition (AS-ALD) are crucial to improving nanopatterning, which is essential for facilitating transistor stacking in semiconducting wafers. However, transistor surfaces are subjected to nonuniformities during the initial AS-...

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Vydané v:	Computers & chemical engineering Ročník 178; s. 108400
Hlavní autori:	Tom, Matthew, Wang, Henrik, Ou, Feiyang, Yun, Sungil, Orkoulas, Gerassimos, Christofides, Panagiotis D.
Médium:	Journal Article
Jazyk:	English
Vydavateľské údaje:	Elsevier Ltd 01.10.2023
Predmet:	Area-selective atomic layer deposition Computational fluid dynamics modeling Reactor optimal design Reactor optimal operation Semiconductor manufacturing processes Computational fluid dynamics modeling Area-selective atomic layer deposition Reactor optimal operation Semiconductor manufacturing processes Reactor optimal design
ISSN:	0098-1354, 1873-4375
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