Synchronous Raman Spectroscopy Method for Measuring Strain-Charge Information of Graphene Materials
Background How to obtain deformation and charge information through in situ measurement of nanomaterial devices is a new and challenging problem, which are related in performance design and failure prevention. Objective To accurately measure the electro-mechanical influence on microelectronic device...
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| Published in: | Experimental mechanics Vol. 63; no. 7; pp. 1193 - 1202 |
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| Main Authors: | , , , , , , |
| Format: | Journal Article |
| Language: | English |
| Published: |
New York
Springer US
01.09.2023
Springer Nature B.V |
| Subjects: | |
| ISSN: | 0014-4851, 1741-2765 |
| Online Access: | Get full text |
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| Summary: | Background
How to obtain deformation and charge information through
in situ
measurement of nanomaterial devices is a new and challenging problem, which are related in performance design and failure prevention.
Objective
To accurately measure the electro-mechanical influence on microelectronic devices, research on an
in situ
measurement method based on Raman spectroscopy is carried out.
Methods
Two analytical models are derived: the doublet vector method and the spectral approximation method. Then, a graphene electrode experiment is used to carry out synchronous
in situ
measurement of strain and charge density. Experimental data are further used to compare and analyze the approximation levels of the spectral approximation method under electro-mechanical field effect.
Results
The results show that when both strain and charge exist and one factor is very weak, the relative difference between the results of the doublet vector method and doublet approximation method, which considers both electrical and mechanical factors, is smaller.
Conclusions
The methods mentioned above can realize synchronous and separate measurement of graphene electronic devices, which can also provide methods for measuring and controlling the electromechanical properties of new-type electronic devices’ electro-mechanical information. |
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| Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 14 |
| ISSN: | 0014-4851 1741-2765 |
| DOI: | 10.1007/s11340-023-00983-6 |