Numerical simulations of ultrathin CdTe solar cells with a ZnxCd1−xS window layer and a Cu2O hole transport layer

CdTe solar cells are investigated using a solar cell capacitance simulator software. First, a conventional fluorine-doped tin oxide (FTO)/i-SnO 2 /CdS/CdTe structure is simulated using input experimental data to verify the simulation process. To make the cell more economical, the thickness of the Cd...

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Bibliographic Details
Published in:Journal of computational electronics Vol. 20; no. 6; pp. 2501 - 2510
Main Authors: Amoupour, Ebrahim, Hassnzadeh, Javad, Abdolahzadeh Ziabari, Ali, Azimi Anaraki, P.
Format: Journal Article
Language:English
Published: New York Springer US 01.12.2021
Springer Nature B.V
Subjects:
Cadmium sulfide
Cadmium telluride
Cadmium tellurides
Carrier density
Carrier lifetime
Carrier recombination
Copper oxides
Efficiency
Electrical Engineering
Energy conversion efficiency
Engineering
Fluorine
Interdiffusion
Interfaces
Mathematical and Computational Engineering
Mathematical and Computational Physics
Mechanical Engineering
Open circuit voltage
Optical and Electronic Materials
Performance degradation
Photovoltaic cells
Short circuit currents
Simulation
Solar cells
Theoretical
Thickness
Tin dioxide
Tin oxides
Zinc sulfide
Solar cells
Window layer
Simulation
Ultrathin
CdTe
Photovoltaics
ISSN:1569-8025, 1572-8137
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Summary:CdTe solar cells are investigated using a solar cell capacitance simulator software. First, a conventional fluorine-doped tin oxide (FTO)/i-SnO 2 /CdS/CdTe structure is simulated using input experimental data to verify the simulation process. To make the cell more economical, the thickness of the CdTe layer is decreased, resulting in a degradation of the device performance. To decrease the minority-carrier recombination loss of the designed structure, a p -type Cu 2 O layer is exploited at the back contact as a hole transport electron blocking layer (HT–EBL). To address the performance degradation, a ZnS/CdS bilayer is used as the window layer. The interdiffusion of Cd into the ZnS due to annealing treatment and the formation of Zn x Cd 1− x S compound are also studied. Cell parameters include the thickness, doping concentration, and carrier lifetime are then optimized to enhance the power conversion efficiency (PCE). The proposed FTO/i-SnO 2 /Zn 0.5 Cd 0.5 S/CdTe/Cu 2 O configuration shows the best PCE of 17.5%, short-circuit current density ( J sc ) of 27.8 mA/cm 2 , open-circuit voltage ( V oc ) of 0.87 V, and fill factor of 72.34% under AM1.5G illumination.
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ISSN:1569-8025
1572-8137
DOI:10.1007/s10825-021-01779-4