Numerical simulations of ultrathin CdTe solar cells with a ZnxCd1−xS window layer and a Cu2O hole transport layer

CdTe solar cells are investigated using a solar cell capacitance simulator software. First, a conventional fluorine-doped tin oxide (FTO)/i-SnO 2 /CdS/CdTe structure is simulated using input experimental data to verify the simulation process. To make the cell more economical, the thickness of the Cd...

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Vydáno v:	Journal of computational electronics Ročník 20; číslo 6; s. 2501 - 2510
Hlavní autoři:	Amoupour, Ebrahim, Hassnzadeh, Javad, Abdolahzadeh Ziabari, Ali, Azimi Anaraki, P.
Médium:	Journal Article
Jazyk:	angličtina
Vydáno:	New York Springer US 01.12.2021 Springer Nature B.V
Témata:	Cadmium sulfide Cadmium telluride Cadmium tellurides Carrier density Carrier lifetime Carrier recombination Copper oxides Efficiency Electrical Engineering Energy conversion efficiency Engineering Fluorine Interdiffusion Interfaces Mathematical and Computational Engineering Mathematical and Computational Physics Mechanical Engineering Open circuit voltage Optical and Electronic Materials Performance degradation Photovoltaic cells Short circuit currents Simulation Solar cells Theoretical Thickness Tin dioxide Tin oxides Zinc sulfide Solar cells Window layer Simulation Ultrathin CdTe Photovoltaics
ISSN:	1569-8025, 1572-8137
On-line přístup:	Získat plný text
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Popis
Shrnutí:	CdTe solar cells are investigated using a solar cell capacitance simulator software. First, a conventional fluorine-doped tin oxide (FTO)/i-SnO 2 /CdS/CdTe structure is simulated using input experimental data to verify the simulation process. To make the cell more economical, the thickness of the CdTe layer is decreased, resulting in a degradation of the device performance. To decrease the minority-carrier recombination loss of the designed structure, a p -type Cu 2 O layer is exploited at the back contact as a hole transport electron blocking layer (HT–EBL). To address the performance degradation, a ZnS/CdS bilayer is used as the window layer. The interdiffusion of Cd into the ZnS due to annealing treatment and the formation of Zn x Cd 1− x S compound are also studied. Cell parameters include the thickness, doping concentration, and carrier lifetime are then optimized to enhance the power conversion efficiency (PCE). The proposed FTO/i-SnO 2 /Zn 0.5 Cd 0.5 S/CdTe/Cu 2 O configuration shows the best PCE of 17.5%, short-circuit current density ( J sc ) of 27.8 mA/cm 2 , open-circuit voltage ( V oc ) of 0.87 V, and fill factor of 72.34% under AM1.5G illumination.
Bibliografie:	ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 14
ISSN:	1569-8025 1572-8137
DOI:	10.1007/s10825-021-01779-4