Ge, G., & Yin, L. (2017). LDPC Coding Scheme for Improving the Reliability of Multi-Level-Cell NAND Flash Memory in Radiation Environments. China communications, 14(8), 10-21. https://doi.org/10.1109/CC.2017.8014343
Citace podle Chicago (17th ed.)Ge, Guangjun, a Liuguo Yin. "LDPC Coding Scheme for Improving the Reliability of Multi-Level-Cell NAND Flash Memory in Radiation Environments." China Communications 14, no. 8 (2017): 10-21. https://doi.org/10.1109/CC.2017.8014343.
Citace podle MLA (9th ed.)Ge, Guangjun, a Liuguo Yin. "LDPC Coding Scheme for Improving the Reliability of Multi-Level-Cell NAND Flash Memory in Radiation Environments." China Communications, vol. 14, no. 8, 2017, pp. 10-21, https://doi.org/10.1109/CC.2017.8014343.
Upozornění: Tyto citace jsou generovány automaticky. Nemusí být zcela správně podle citačních pravidel..