Two-dimensional reconfigurable electronics enabled by asymmetric floating gate

Reconfigurable devices with customized functionalities hold great potential in addressing the scaling limits of silicon-based field-effect transistors (FETs). The conventional reconfigurable FETs are limited to the applications in logic circuits, and the commonly used multi-gate programming strategi...

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Vydáno v:	Nano research Ročník 15; číslo 5; s. 4439 - 4447
Hlavní autoři:	Jin, Tengyu, Gao, Jing, Wang, Yanan, Zheng, Yue, Sun, Shuo, Liu, Lei, Lin, Ming, Chen, Wei
Médium:	Journal Article
Jazyk:	angličtina
Vydáno:	Beijing Tsinghua University Press 01.05.2022
Témata:	Asymmetry Atomic/Molecular Structure and Spectra Biomedicine Biotechnology Chemistry and Materials Science Complexity Condensed Matter Physics Dielectric properties Engineering Field effect transistors Graphene Homojunctions Logic circuits Materials Science Nanotechnology Nanowires Optoelectronic devices Photodiodes Photoelectricity Potentiation Power consumption Random access memory Reconfiguration Research Article Semiconductor devices Synapses Synaptic depression Transistors 2-bit memory two-dimensional (2D) materials photodiode artificial synapse reconfigurable device homojunction
ISSN:	1998-0124, 1998-0000
On-line přístup:	Získat plný text
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Popis
Shrnutí:	Reconfigurable devices with customized functionalities hold great potential in addressing the scaling limits of silicon-based field-effect transistors (FETs). The conventional reconfigurable FETs are limited to the applications in logic circuits, and the commonly used multi-gate programming strategies often lead to high power consumption and device complexity. Here, we report a reconfigurable WSe 2 optoelectronic device that can function as photodiode, artificial synapse, and 2-bit memory in a single device, enabled by an asymmetric floating gate (AFG) that can continuously program the device into different homojunction modes. The lateral p–n homojunction formed in the AFG device exhibits high-performance self-powered photodetection, with a responsivity over 0.17 A·W −1 and a wide detection spectral range from violet to near-infrared region. The AFG device can also mimic synaptic features of biological synapses and achieve distinct potentiation/depression behaviors under the modulation of both drain-source bias and light illumination. Moreover, when working as a 2-bit memory via the transition between n–n + and p–n homojunctions, the AFG device shows four distinct conductive states with a high on/off current ratio over 10 6 and good repeatability. Combining reduced processing complexity and reconfigurable functionalities, the WSe 2 AFG devices demonstrate great potential towards high-performance photoelectric interconnected circuits.
Bibliografie:	ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 14
ISSN:	1998-0124 1998-0000
DOI:	10.1007/s12274-022-4070-7