Defect accumulation in β-Ga2O3 implanted with Yb

Radiation-induced crystal lattice damage and its recovery in wide bandgap oxides, in particular beta-gallium oxide (β-Ga2O3), is a complex process. This paper presents the detailed study of defect accumulation in the β-Ga2O3 single crystal implanted with Ytterbium (Yb) ions and the impact of Rapid T...

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Vydané v:	Acta materialia Ročník 268; s. 119760
Hlavní autori:	Sarwar, Mahwish, Ratajczak, Renata, Mieszczynski, Cyprian, Wierzbicka, Aleksandra, Gieraltowska, Sylwia, Heller, René, Eisenwinder, Stefan, Wozniak, Wojciech, Guziewicz, Elżbieta
Médium:	Journal Article
Jazyk:	English
Vydavateľské údaje:	Elsevier Ltd 15.04.2024
Predmet:	Gallium oxide High-resolution x-ray diffraction Ion implantation McChasy Rare-earth ions Rutherford backscattering spectrometry High-resolution x-ray diffraction Ion implantation Rare-earth ions Rutherford backscattering spectrometry McChasy Gallium oxide
ISSN:	1359-6454
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