Defect accumulation in β-Ga2O3 implanted with Yb
Radiation-induced crystal lattice damage and its recovery in wide bandgap oxides, in particular beta-gallium oxide (β-Ga2O3), is a complex process. This paper presents the detailed study of defect accumulation in the β-Ga2O3 single crystal implanted with Ytterbium (Yb) ions and the impact of Rapid T...
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| Published in: | Acta materialia Vol. 268; p. 119760 |
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| Main Authors: | , , , , , , , , |
| Format: | Journal Article |
| Language: | English |
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Elsevier Ltd
15.04.2024
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| ISSN: | 1359-6454 |
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| Abstract | Radiation-induced crystal lattice damage and its recovery in wide bandgap oxides, in particular beta-gallium oxide (β-Ga2O3), is a complex process. This paper presents the detailed study of defect accumulation in the β-Ga2O3 single crystal implanted with Ytterbium (Yb) ions and the impact of Rapid Thermal Annealing (RTA) on the defects formed. The (2¯01)oriented β-Ga2O3 single crystals were implanted with eleven fluences of Yb ions ranging from 1 × 1012 to 5 × 1015 at/cm2. Channeling Rutherford Backscattering Spectrometry (RBS/c) was used to study the crystal lattice damage induced by ion implantation and the level of structure recovery after annealing. The quantitative and qualitative analyses of collected spectra were performed by computer simulations. As a result, we present the first defect accumulation curve of β-Ga2O3 implanted with rare earth ion that reveals a two-step damage process. In the first stage, the damage of the β-Ga2O3 is inconspicuous, but begins to grow rapidly from the fluence of 1 × 1013 at/cm2, reaching the saturation at the random level for the Yb ion fluence of 1 × 1014 at/cm2. Further irradiation causes the damage peak to become bimodal, indicating that at least two new defect forms develop for the higher ion fluence. These two damage zones differently react to annealing, suggesting that they could origin from two phases, the amorphization phase and the new crystalline phase of Ga2O3. High-resolution x-ray diffraction (HRXRD) demonstrates the presence of strain and the γ phase of Ga2O3 after implantation, which disappear after annealing.
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| AbstractList | Radiation-induced crystal lattice damage and its recovery in wide bandgap oxides, in particular beta-gallium oxide (β-Ga2O3), is a complex process. This paper presents the detailed study of defect accumulation in the β-Ga2O3 single crystal implanted with Ytterbium (Yb) ions and the impact of Rapid Thermal Annealing (RTA) on the defects formed. The (2¯01)oriented β-Ga2O3 single crystals were implanted with eleven fluences of Yb ions ranging from 1 × 1012 to 5 × 1015 at/cm2. Channeling Rutherford Backscattering Spectrometry (RBS/c) was used to study the crystal lattice damage induced by ion implantation and the level of structure recovery after annealing. The quantitative and qualitative analyses of collected spectra were performed by computer simulations. As a result, we present the first defect accumulation curve of β-Ga2O3 implanted with rare earth ion that reveals a two-step damage process. In the first stage, the damage of the β-Ga2O3 is inconspicuous, but begins to grow rapidly from the fluence of 1 × 1013 at/cm2, reaching the saturation at the random level for the Yb ion fluence of 1 × 1014 at/cm2. Further irradiation causes the damage peak to become bimodal, indicating that at least two new defect forms develop for the higher ion fluence. These two damage zones differently react to annealing, suggesting that they could origin from two phases, the amorphization phase and the new crystalline phase of Ga2O3. High-resolution x-ray diffraction (HRXRD) demonstrates the presence of strain and the γ phase of Ga2O3 after implantation, which disappear after annealing.
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| ArticleNumber | 119760 |
| Author | Gieraltowska, Sylwia Wozniak, Wojciech Sarwar, Mahwish Wierzbicka, Aleksandra Ratajczak, Renata Eisenwinder, Stefan Guziewicz, Elżbieta Heller, René Mieszczynski, Cyprian |
| Author_xml | – sequence: 1 givenname: Mahwish orcidid: 0000-0002-8173-377X surname: Sarwar fullname: Sarwar, Mahwish email: sarwar@ifpan.edu.pl organization: Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw, Poland – sequence: 2 givenname: Renata orcidid: 0000-0001-8596-2230 surname: Ratajczak fullname: Ratajczak, Renata organization: National Centre for Nuclear Research, Soltana 7, 05–400 Otwock, Poland – sequence: 3 givenname: Cyprian orcidid: 0000-0002-0497-8984 surname: Mieszczynski fullname: Mieszczynski, Cyprian organization: National Centre for Nuclear Research, Soltana 7, 05–400 Otwock, Poland – sequence: 4 givenname: Aleksandra orcidid: 0000-0003-1379-5941 surname: Wierzbicka fullname: Wierzbicka, Aleksandra organization: Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw, Poland – sequence: 5 givenname: Sylwia surname: Gieraltowska fullname: Gieraltowska, Sylwia organization: Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw, Poland – sequence: 6 givenname: René surname: Heller fullname: Heller, René organization: Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, D-01328 Dresden, Germany – sequence: 7 givenname: Stefan surname: Eisenwinder fullname: Eisenwinder, Stefan organization: Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, D-01328 Dresden, Germany – sequence: 8 givenname: Wojciech surname: Wozniak fullname: Wozniak, Wojciech organization: Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw, Poland – sequence: 9 givenname: Elżbieta orcidid: 0000-0001-6158-5258 surname: Guziewicz fullname: Guziewicz, Elżbieta organization: Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw, Poland |
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| Keywords | High-resolution x-ray diffraction Ion implantation Rare-earth ions Rutherford backscattering spectrometry McChasy Gallium oxide |
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| Title | Defect accumulation in β-Ga2O3 implanted with Yb |
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