Origination and evolution of point defects in AlN film annealed at high temperature

While high temperature annealing has been proven to be an effective strategy to reduce threading dislocation density of AlN film, the point defect induced near-ultraviolet emission increases dramatically with the increase in annealing temperature, and thus limits its application in deep ultraviolet...

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Vydané v:	Journal of luminescence Ročník 235; s. 118032
Hlavní autori:	Kai, Cuihong, Zang, Hang, Ben, Jianwei, Jiang, Ke, Shi, Zhiming, Jia, Yuping, Cao, Xingzhong, Lü, Wei, Sun, Xiaojuan, Li, Dabing
Médium:	Journal Article
Jazyk:	English
Vydavateľské údaje:	Elsevier B.V 01.07.2021
Predmet:	AlN Evolution mechanism High temperature annealing Point defects AlN Point defects Evolution mechanism High temperature annealing
ISSN:	0022-2313, 1872-7883
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