Parameter extraction method for universal amorphous silicon thin-film transistors simulation program with integrated circuit emphasis model

The universal simulation program with integrated circuit emphasis (SPICE) model for hydrogenated amorphous silicon thin-film transistor is largely used in circuit simulation. This model has more than 10 parameters to be extracted through experimental data, and the optimal method to determine them is...

Celý popis

Uloženo v:
Podrobná bibliografie
Vydáno v:IET circuits, devices & systems Ročník 6; číslo 2; s. 118 - 121
Hlavní autoři: Jin, J.W., Oudwan, M., Daineka, D., Moustapha, O., Bonnassieux, Y.
Médium: Journal Article
Jazyk:angličtina
Vydáno: Stevenage John Wiley & Sons, Inc 01.03.2012
Témata:
Amorphous silicon
Circuits
Computer simulation
Extraction
Integrated circuits
Mathematical models
Semiconductor devices
Thin films
Transistors
ISSN:1751-858X, 1751-8598
On-line přístup:Získat plný text
Tagy: Přidat tag
Žádné tagy, Buďte první, kdo vytvoří štítek k tomuto záznamu!
Popis
Shrnutí:The universal simulation program with integrated circuit emphasis (SPICE) model for hydrogenated amorphous silicon thin-film transistor is largely used in circuit simulation. This model has more than 10 parameters to be extracted through experimental data, and the optimal method to determine them is still open to discussion. In this study, the authors propose a new method for the extraction of the main above-threshold regime parameters. This method can be used regardless of the resistance value between the channel and the source-drain. The parameters extracted with this method are less sensitive on experimental data selection than the ones obtained through conventional methods. In addition, these parameters successfully describe the experimental data.
Bibliografie:SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 14
ObjectType-Article-1
ObjectType-Feature-2
content type line 23
ISSN:1751-858X
1751-8598
DOI:10.1049/iet-cds.2011.0124