Photovoltage improvements in Cz-Si by low-energy implantation of carbon ions

We demonstrate photovoltage improvements in Czochralski-grown silicon wafers by low-energy implantation of carbon ions. After annealing at temperatures above 550 °C the surface photovoltage (SPV) increases in both implanted and unimplanted sample sets. The increase in the SPV signal observed in impl...

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Bibliographic Details

Published in:	Materials Research Express Vol. 3; no. 5; p. 55017
Main Authors:	Nadtochiy, A, Korotchenkov, O, Romanyuk, B, Melnik, V, Popov, V
Format:	Journal Article
Language:	English
Published:	IOP Publishing 01.05.2016
Subjects:	Annealing Carbon Decay Defects implantation Low energy photovoltage Photovoltages shallow junction Silicon Wafers
ISSN:	2053-1591, 2053-1591
Online Access:	Get full text
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