Structural and optoelectronic properties of LiYP (Y = Ca, Mg, and Zn) half-Heusler alloy under pressure: A DFT study

By adjusting the lattice geometry through pressure engineering, it is possible to further enhance and customize various properties of materials even at zero pressure. The utilization of pressure allows for the modification of the electronic structure of materials, presenting a relatively new approac...

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Vydané v:	Physica. B, Condensed matter Ročník 667; s. 415216
Hlavní autori:	Miri, Mohammed, Ziat, Younes, Belkhanchi, Hamza, Zarhri, Zakaryaa, Ait El Kadi, Youssef
Médium:	Journal Article
Jazyk:	English
Vydavateľské údaje:	Elsevier B.V 15.10.2023
Predmet:	Electronic properties Half-heusler Optoelectronic properties Pressure Semiconductors Electronic properties Semiconductors Optoelectronic properties Pressure Half-heusler
ISSN:	0921-4526, 1873-2135
On-line prístup:	Získať plný text
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