Structural and optoelectronic properties of LiYP (Y = Ca, Mg, and Zn) half-Heusler alloy under pressure: A DFT study

By adjusting the lattice geometry through pressure engineering, it is possible to further enhance and customize various properties of materials even at zero pressure. The utilization of pressure allows for the modification of the electronic structure of materials, presenting a relatively new approac...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Physica. B, Condensed matter Jg. 667; S. 415216
Hauptverfasser:	Miri, Mohammed, Ziat, Younes, Belkhanchi, Hamza, Zarhri, Zakaryaa, Ait El Kadi, Youssef
Format:	Journal Article
Sprache:	Englisch
Veröffentlicht:	Elsevier B.V 15.10.2023
Schlagworte:	Electronic properties Half-heusler Optoelectronic properties Pressure Semiconductors Electronic properties Semiconductors Optoelectronic properties Pressure Half-heusler
ISSN:	0921-4526, 1873-2135
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!