CMOS-Based High-Density Silicon Microprobe Arrays for Electronic Depth Control in Intracortical Neural Recording-Characterization and Application

This paper reports on the characterization and intracortical recording performance of high-density complementary-metal-oxide-semiconductor (CMOS)-based silicon microprobe arrays. They comprise multiplexing units integrated on the probe shafts being part of the signal transmission path. Their electri...

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Vydáno v:	Journal of microelectromechanical systems Ročník 21; číslo 6; s. 1426 - 1435
Hlavní autoři:	Seidl, K., Schwaerzle, M., Ulbert, I., Neves, H. P., Paul, O., Ruther, P.
Médium:	Journal Article
Jazyk:	angličtina
Vydáno:	New York, NY IEEE 01.12.2012 Institute of Electrical and Electronics Engineers
Témata:	Applied sciences CMOS integrated circuits CMOS MEMS Complementary-metal-oxide-semiconductor (CMOS) circuitry Crosstalk electrode impedances electrode selection Electrodes Electronics Exact sciences and technology high-density electrode array Impedance Instruments, apparatus, components and techniques common to several branches of physics and astronomy Mechanical instruments, equipment and techniques Micro- and nanoelectromechanical devices (mems/nems) Micromechanical devices and systems neural recording Neurons noise Physics potential measurements Probes Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Shafts silicon microprobes Microprobe Multiplexing Energy consumption Crosstalk Central nervous system Data transmission electrode selection Shafts Platinum Complementary MOS technology Complementary-metal-oxide-semiconductor (CMOS) circuitry noise Silicon Microsensors Microelectromechanical device Microelectrodes potential measurements Signal-to-noise ratio CMOS MEMS high-density electrode array In vivo Electrical measurement neural recording silicon microprobes electrode impedances
ISSN:	1057-7157, 1941-0158
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Shrnutí:	This paper reports on the characterization and intracortical recording performance of high-density complementary-metal-oxide-semiconductor (CMOS)-based silicon microprobe arrays. They comprise multiplexing units integrated on the probe shafts being part of the signal transmission path. Their electrical characterization reveals a negligible contribution on the electrode impedances of 139 ±11 kΩ and 1.2 ±0.1 MΩ and on the crosstalks of 0.12% and 0.98% for iridium oxide ( IrO x ) and platinum (Pt) electrodes, respectively. The power consumption of the single-shaft probe was found to be 57.5 μW during electrode selection. The noise voltage of the switches was determined to be 5.6 nV/√Hz; it does not measurably affect the probe performance. The recording selectivity of the electrode array is demonstrated by electrical potential measurements in saline solution while injecting a stimulating current using an external probe. In-vivo recordings in anesthetized rats using all 188 electrodes with a pitch of 40.7 μm are presented and analyzed in terms of single neural activity and signal-to-noise ratio. The concept of electronic depth control is proven by performing mechanical translation of the probe shaft while electronically switching to adjacent electrodes to compensate the mechanical shift.
ISSN:	1057-7157 1941-0158
DOI:	10.1109/JMEMS.2012.2206564