Optimizing Write Fidelity of MRAMs by Alternating Water-Filling Algorithm

Magnetic random-access memory (MRAM) is a promising memory technology due to its high density, non-volatility, and high endurance. However, achieving high memory fidelity incurs high write-energy costs, which should be reduced for large-scale deployment of MRAMs. In this paper, we formulate a biconv...

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Veröffentlicht in:IEEE transactions on communications Jg. 70; H. 9; S. 5825 - 5836
Hauptverfasser: Kim, Yongjune, Jeon, Yoocharn, Choi, Hyeokjin, Guyot, Cyril, Cassuto, Yuval
Format: Journal Article
Sprache:Englisch
Veröffentlicht: New York IEEE 01.09.2022
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
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ISSN:0090-6778, 1558-0857
Online-Zugang:Volltext
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