Channel Parameter and Read Reference Voltages Estimation in 3-D NAND Flash Memory Using Unsupervised Learning Algorithms

In 3-D NAND flash memory, the channel is always offset due to the complicated interference from the program/erase (PE), including the data retention and layer interference, so that the channel estimation is desired. However, due to the physical structure of 3-D flash memory, there exists significant...

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Veröffentlicht in:	IEEE transactions on computer-aided design of integrated circuits and systems Jg. 43; H. 1; S. 305 - 318
Hauptverfasser:	Hu, Haihua, Han, Guojun, Wu, Wenhua, Liu, Chang
Format:	Journal Article
Sprache:	Englisch
Veröffentlicht:	New York IEEE 01.01.2024 The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Schlagworte:	3-D NAND flash memory Algorithms Channel estimation Error analysis Error correction Estimation Flash memories Flash memory (computers) Interference low complexity Machine learning Memory Parameter estimation Parameters read reference voltage (RRV) Search algorithms Threshold voltage Unsupervised learning unsupervised learning algorithm
ISSN:	0278-0070, 1937-4151
Online-Zugang:	Volltext
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