High-Sensitivity and Fast-Response Graphene/Crystalline Silicon Schottky Junction-Based Near-IR Photodetectors

Schottky junction near-infrared photodetectors were constructed by combing monolayer graphene (MLG) film and bulk silicon. Notably, the device could operate at zero external voltage bias because of the strong photovoltaic behavior of the MLG/Si Schottky junction, giving rise to high responsivity and...

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Veröffentlicht in:IEEE electron device letters Jg. 34; H. 10; S. 1337 - 1339
Hauptverfasser: Lv, Peng, Zhang, Xiujuan, Zhang, Xiwei, Deng, Wei, Jie, Jiansheng
Format: Journal Article
Sprache:Englisch
Veröffentlicht: New York, NY IEEE 01.10.2013
Institute of Electrical and Electronics Engineers
Schlagworte:
Applied sciences
Bolometer; infrared, submillimeter wave, microwave and radiowave receivers and detectors
Electronics
Exact sciences and technology
Graphene
Infrared, submillimeter wave, microwave and radiowave instruments, equipment and techniques
Instruments, apparatus, components and techniques common to several branches of physics and astronomy
Junctions
Measurements common to several branches of physics and astronomy
Metrology, measurements and laboratory procedures
near-infrared (NIR)
Optoelectronic devices
Photoconductivity
Photodetectors
Physics
planar Si
Schottky junction
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon
Substrates
Temperature measurement
Time and frequency
Infrared detector
Time measurement
Photodetector
Time response
Crystalline material
Near infrared radiation
planar Si
Response function
Si junctions
photodetectors
near-infrared (NIR)
Graphene
High sensitivity
Optoelectronic device
Schottky junction
Zero band gap semiconductors
Silicon
Room temperature
Planar technology
ISSN:0741-3106, 1558-0563
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Zusammenfassung:Schottky junction near-infrared photodetectors were constructed by combing monolayer graphene (MLG) film and bulk silicon. Notably, the device could operate at zero external voltage bias because of the strong photovoltaic behavior of the MLG/Si Schottky junction, giving rise to high responsivity and detectivity of 29 mAW -1 and 3.9×10 11 cmHz 1/2 W -1 , respectively, at room temperature. Time response measurement revealed a high response speed of 100 μs, which allowed the device following a fast varied light with frequency up to 2100 Hz. In addition, the device showed great potential for low light detection with intensity at 10 K.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2013.2275169