Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and Junction Barrier Schottky Diodes

Heavy-ion data suggest that a common mechanism is responsible for single-event burnout (SEB) in 1200-V power MOSFETs and junction barrier Schottky (JBS) diodes. Similarly, heavy-ion data suggest a common mechanism is also responsible for leakage current degradation in both devices. This mechanism, b...

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Bibliographic Details
Published in:IEEE transactions on nuclear science Vol. 67; no. 1; pp. 22 - 28
Main Authors: Ball, D. R., Hutson, J. M., Javanainen, A., Lauenstein, J.-M., Galloway, K. F., Johnson, R. A., Alles, M. L., Sternberg, A. L., Sierawski, B. D., Witulski, A. F., Reed, R. A., Schrimpf, R. D.
Format: Journal Article
Language:English
Published: New York IEEE 01.01.2020
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects:
Burnout
Degradation
diode
Electric fields
heavy ion
Heavy ions
Ions
Junctions
Leakage current
MOSFET
MOSFETs
power
Schottky diodes
Silicon carbide
silicon carbide (SiC)
single-event burnout (SEB)
ISSN:0018-9499, 1558-1578
Online Access:Get full text
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Summary:Heavy-ion data suggest that a common mechanism is responsible for single-event burnout (SEB) in 1200-V power MOSFETs and junction barrier Schottky (JBS) diodes. Similarly, heavy-ion data suggest a common mechanism is also responsible for leakage current degradation in both devices. This mechanism, based on ion-induced, highly localized energy pulses, is demonstrated in simulations and shown to be capable of causing degradation and SEB for both the MOSFETs and JBS diodes.
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ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2019.2955922