A 73% Peak PDP Single-Photon Avalanche Diode Implemented in 110 nm CIS Technology With Doping Compensation

In this article, we present 10 <inline-formula><tex-math notation="LaTeX">\mu</tex-math></inline-formula>m diameter SPADs fabricated in 110 nm CIS technology based on an N + /HVPW junction, with enhanced sensitivity at short wavelengths. To reduce tunneling noise du...

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Veröffentlicht in:IEEE journal of selected topics in quantum electronics Jg. 30; H. 1: Single-Photon Technologies and Applications; S. 1 - 10
Hauptverfasser: Lee, Myung-Jae, Karaca, Utku, Kizilkan, Ekin, Bruschini, Claudio, Charbon, Edoardo
Format: Journal Article
Sprache:Englisch
Veröffentlicht: New York IEEE 01.01.2024
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Schlagworte:
Avalanche diodes
Bias
Cameras
CMOS image sensor technology
CMOS image sensors
Compensation
Doping
doping compensation
Doping profiles
Electric fields
high sensitivity
Junctions
Multispectral imaging
Photon avalanches
RGB-Z multispectral camera
Semiconductor process modeling
Sensitivity
Sensitivity enhancement
Single-photon avalanche diodes
Timing jitter
Tunneling
Ultraviolet spectra
ISSN:1077-260X, 1558-4542
Online-Zugang:Volltext
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Zusammenfassung:In this article, we present 10 <inline-formula><tex-math notation="LaTeX">\mu</tex-math></inline-formula>m diameter SPADs fabricated in 110 nm CIS technology based on an N + /HVPW junction, with enhanced sensitivity at short wavelengths. To reduce tunneling noise due to the highly-doped layers in the process, a doping compensation technique is used, which allows to adjust the doping profile of the HVPW. Thanks to this technique, DCR is reduced by a factor of 24 at 2 V excess bias voltage when compared to non-compensated devices. Furthermore, the maximum achievable PDP is enhanced by 49% thanks to the much lower DCR leading to a PDP of 73%, the highest ever reported at 440 nm, while the DCR is 12.5 cps/<inline-formula><tex-math notation="LaTeX">\mu</tex-math></inline-formula>m 2 , all at the 5 V excess bias. Since the junction is formed very close to the surface, the SPAD has excellent sensitivity in the UV spectrum, with a PDP of 43% at a wavelength of 350 nm. The proposed SPAD also achieves a PDP of 7% with a timing jitter of 68 ps at 850 nm at 5 V excess bias, which makes the device very useful for RGB-Z (RGB-D) sensors.
Bibliographie:ObjectType-Article-1
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ISSN:1077-260X
1558-4542
DOI:10.1109/JSTQE.2023.3288674