A 73% Peak PDP Single-Photon Avalanche Diode Implemented in 110 nm CIS Technology With Doping Compensation

In this article, we present 10 <inline-formula><tex-math notation="LaTeX">\mu</tex-math></inline-formula>m diameter SPADs fabricated in 110 nm CIS technology based on an N + /HVPW junction, with enhanced sensitivity at short wavelengths. To reduce tunneling noise du...

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Vydané v:	IEEE journal of selected topics in quantum electronics Ročník 30; číslo 1: Single-Photon Technologies and Applications; s. 1 - 10
Hlavní autori:	Lee, Myung-Jae, Karaca, Utku, Kizilkan, Ekin, Bruschini, Claudio, Charbon, Edoardo
Médium:	Journal Article
Jazyk:	English
Vydavateľské údaje:	New York IEEE 01.01.2024 The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Predmet:	Avalanche diodes Bias Cameras CMOS image sensor technology CMOS image sensors Compensation Doping doping compensation Doping profiles Electric fields high sensitivity Junctions Multispectral imaging Photon avalanches RGB-Z multispectral camera Semiconductor process modeling Sensitivity Sensitivity enhancement Single-photon avalanche diodes Timing jitter Tunneling Ultraviolet spectra
ISSN:	1077-260X, 1558-4542
On-line prístup:	Získať plný text
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