A 73% Peak PDP Single-Photon Avalanche Diode Implemented in 110 nm CIS Technology With Doping Compensation

In this article, we present 10 <inline-formula><tex-math notation="LaTeX">\mu</tex-math></inline-formula>m diameter SPADs fabricated in 110 nm CIS technology based on an N + /HVPW junction, with enhanced sensitivity at short wavelengths. To reduce tunneling noise du...

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Vydané v:	IEEE journal of selected topics in quantum electronics Ročník 30; číslo 1: Single-Photon Technologies and Applications; s. 1 - 10
Hlavní autori:	Lee, Myung-Jae, Karaca, Utku, Kizilkan, Ekin, Bruschini, Claudio, Charbon, Edoardo
Médium:	Journal Article
Jazyk:	English
Vydavateľské údaje:	New York IEEE 01.01.2024 The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Predmet:	Avalanche diodes Bias Cameras CMOS image sensor technology CMOS image sensors Compensation Doping doping compensation Doping profiles Electric fields high sensitivity Junctions Multispectral imaging Photon avalanches RGB-Z multispectral camera Semiconductor process modeling Sensitivity Sensitivity enhancement Single-photon avalanche diodes Timing jitter Tunneling Ultraviolet spectra
ISSN:	1077-260X, 1558-4542
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Abstract	In this article, we present 10 <inline-formula><tex-math notation="LaTeX">\mu</tex-math></inline-formula>m diameter SPADs fabricated in 110 nm CIS technology based on an N + /HVPW junction, with enhanced sensitivity at short wavelengths. To reduce tunneling noise due to the highly-doped layers in the process, a doping compensation technique is used, which allows to adjust the doping profile of the HVPW. Thanks to this technique, DCR is reduced by a factor of 24 at 2 V excess bias voltage when compared to non-compensated devices. Furthermore, the maximum achievable PDP is enhanced by 49% thanks to the much lower DCR leading to a PDP of 73%, the highest ever reported at 440 nm, while the DCR is 12.5 cps/<inline-formula><tex-math notation="LaTeX">\mu</tex-math></inline-formula>m 2 , all at the 5 V excess bias. Since the junction is formed very close to the surface, the SPAD has excellent sensitivity in the UV spectrum, with a PDP of 43% at a wavelength of 350 nm. The proposed SPAD also achieves a PDP of 7% with a timing jitter of 68 ps at 850 nm at 5 V excess bias, which makes the device very useful for RGB-Z (RGB-D) sensors.
AbstractList	In this article, we present 10 [Formula Omitted]m diameter SPADs fabricated in 110 nm CIS technology based on an N+/HVPW junction, with enhanced sensitivity at short wavelengths. To reduce tunneling noise due to the highly-doped layers in the process, a doping compensation technique is used, which allows to adjust the doping profile of the HVPW. Thanks to this technique, DCR is reduced by a factor of 24 at 2 V excess bias voltage when compared to non-compensated devices. Furthermore, the maximum achievable PDP is enhanced by 49% thanks to the much lower DCR leading to a PDP of 73%, the highest ever reported at 440 nm, while the DCR is 12.5 cps/[Formula Omitted]m2, all at the 5 V excess bias. Since the junction is formed very close to the surface, the SPAD has excellent sensitivity in the UV spectrum, with a PDP of 43% at a wavelength of 350 nm. The proposed SPAD also achieves a PDP of 7% with a timing jitter of 68 ps at 850 nm at 5 V excess bias, which makes the device very useful for RGB-Z (RGB-D) sensors. In this article, we present 10 <inline-formula><tex-math notation="LaTeX">\mu</tex-math></inline-formula>m diameter SPADs fabricated in 110 nm CIS technology based on an N + /HVPW junction, with enhanced sensitivity at short wavelengths. To reduce tunneling noise due to the highly-doped layers in the process, a doping compensation technique is used, which allows to adjust the doping profile of the HVPW. Thanks to this technique, DCR is reduced by a factor of 24 at 2 V excess bias voltage when compared to non-compensated devices. Furthermore, the maximum achievable PDP is enhanced by 49% thanks to the much lower DCR leading to a PDP of 73%, the highest ever reported at 440 nm, while the DCR is 12.5 cps/<inline-formula><tex-math notation="LaTeX">\mu</tex-math></inline-formula>m 2 , all at the 5 V excess bias. Since the junction is formed very close to the surface, the SPAD has excellent sensitivity in the UV spectrum, with a PDP of 43% at a wavelength of 350 nm. The proposed SPAD also achieves a PDP of 7% with a timing jitter of 68 ps at 850 nm at 5 V excess bias, which makes the device very useful for RGB-Z (RGB-D) sensors.
Author	Bruschini, Claudio Kizilkan, Ekin Lee, Myung-Jae Charbon, Edoardo Karaca, Utku
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Snippet	In this article, we present 10 <inline-formula><tex-math notation="LaTeX">\mu</tex-math></inline-formula>m diameter SPADs fabricated in 110 nm CIS technology... In this article, we present 10 [Formula Omitted]m diameter SPADs fabricated in 110 nm CIS technology based on an N+/HVPW junction, with enhanced sensitivity at...
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SubjectTerms	Avalanche diodes Bias Cameras CMOS image sensor technology CMOS image sensors Compensation Doping doping compensation Doping profiles Electric fields high sensitivity Junctions Multispectral imaging Photon avalanches RGB-Z multispectral camera Semiconductor process modeling Sensitivity Sensitivity enhancement Single-photon avalanche diodes Timing jitter Tunneling Ultraviolet spectra
Title	A 73% Peak PDP Single-Photon Avalanche Diode Implemented in 110 nm CIS Technology With Doping Compensation
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