A Multi-Time-Step Finite Element Algorithm for 3-D Simulation of Coupled Drift-Diffusion Reaction Process in Total Ionizing Dose Effect

In order to study the total ionizing dose degradation and enhanced low dose rate sensitivity effect for semiconductor devices in the space environment, we simulate the drift-diffusion-reaction processes in a 3-dimensional SiO 2 -Si system. Since the time scale of the drift-diffusion processes is muc...

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Veröffentlicht in:IEEE transactions on semiconductor manufacturing Jg. 31; H. 1; S. 183 - 189
Hauptverfasser: Xu, Jingjie, Ma, Zhaocan, Li, Hongliang, Song, Yu, Zhang, Linbo, Lu, Benzhuo
Format: Journal Article
Sprache:Englisch
Veröffentlicht: New York IEEE 01.02.2018
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Schlagworte:
Aerospace environments
Charge carrier processes
Chemical reactions
Chemicals
Computer simulation
Diffusion
Dosage
Drift
Drift-diffusion reaction
ELDRS
Electrodiffusion
Finite element method
Logic gates
Mathematical analysis
Mathematical model
multi-time-step algorithm
Numerical models
Ordinary differential equations
Partial differential equations
Robustness (mathematics)
Semiconductor devices
Sensitivity
Silicon dioxide
Simulation
Solid modeling
STEM
TID
ISSN:0894-6507, 1558-2345
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Zusammenfassung:In order to study the total ionizing dose degradation and enhanced low dose rate sensitivity effect for semiconductor devices in the space environment, we simulate the drift-diffusion-reaction processes in a 3-dimensional SiO 2 -Si system. Since the time scale of the drift-diffusion processes is much larger than that of the chemical reaction processes, we use a multi-time-step algorithm to calculate the two types of processes, respectively. In this paper, partial differential equations used to describe the electrodiffusion processes are solved by a finite element method, while the chemical reactions taking place independently in every mesh node are solved as ordinary differential equations. We reproduce qualitative properties of total ionizing dose effect and compare our numerical results with experimental data and other simulation results. This paper paves a way for 3-D simulation of total ionizing dose and enhanced low dose rate sensitivity with high efficiency and robustness.
Bibliographie:ObjectType-Article-1
SourceType-Scholarly Journals-1
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content type line 14
ISSN:0894-6507
1558-2345
DOI:10.1109/TSM.2017.2779058