All‐Electrical Programmable Domain‐Wall Spin Logic‐In‐Memory Device

Control of spins by spin–orbit torque brings novel strategies to design spintronic devices with potentially high impact in data storage and logic‐in‐memory computing architectures. Although various attempts have been proposed to avoid the participation of magnetic field during magnetization switchin...

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Vydané v:	Advanced electronic materials Ročník 8; číslo 10
Hlavní autori:	Wang, Weiyang, Sheng, Yu, Zheng, Yuanhui, Ji, Yang, Wang, Kaiyou
Médium:	Journal Article
Jazyk:	English
Vydavateľské údaje:	01.10.2022
Predmet:	domain walls Dzyaloshinskii–Moriya interactions field‐free switching spin logic‐in‐memory spin–orbit torque
ISSN:	2199-160X, 2199-160X
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