3D Parallel Monte Carlo Simulation of GaAs MESFETs

We have investigated three‐dimensional (3D) effects in sub‐micron GaAs MESFETs using a parallel Monte Carlo device simulator, PMC‐3D [1]. The parallel algorithm couples a standard Monte Carlo particle simulator for the Boltzmann equation with a 3D Poisson solver using spatial decomposition of the de...

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Bibliographic Details

Published in:	VLSI design (Yverdon, Switzerland) Vol. 6; no. 1-4; pp. 273 - 276
Main Authors:	Pennathur, S., Sandalci, Can K., Koç, Çetin K., Goodnick, S. M.
Format:	Journal Article
Language:	English
Published:	01.01.1998
ISSN:	1065-514X, 1563-5171
Online Access:	Get full text
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