Deposition mechanism and photodetector application of plasma-enhanced atomic layer-deposited Ta2O5 films at various deposition temperatures

In this work, a plasma-enhanced atomic layer deposition (PEALD) has been employed to fabricate Ta2O5 thin films for application in ultraviolet detection. The film properties have been explored in a wide deposition temperature range of 200–450 °C. A deposition mechanism with three deposited states of...

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Vydané v:	Ceramics international Ročník 51; číslo 19; s. 28791 - 28801
Hlavní autori:	Wang, Chen, Zhou, Chen-Hao, Wang, Jian-Gui, Cho, Yun-Shao, Wu, Wan-Yu, Wuu, Dong-Sing, Huang, Chien-Jung, Lien, Shui-Yang
Médium:	Journal Article
Jazyk:	English
Vydavateľské údaje:	Elsevier Ltd 01.08.2025
Predmet:	Deposition mechanism Plasma enhanced atomic layer deposition Ta2O5 film properties Ta2O5/p-Si heterojunction photodetector Plasma enhanced atomic layer deposition Deposition mechanism Ta2O5/p-Si heterojunction photodetector Ta2O5 film properties
ISSN:	0272-8842
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